Light emitting device package

ABSTRACT

A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.

CROSS-REFERENCE TO THE RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/255,466 filed Jan. 23, 2019, which is a continuation application ofU.S. application of Ser. No. 15/279,864, filed on Sep. 29, 2016, whichclaims priority from Korean Patent Application No. 10-2016-0086022 filedon Jul. 7, 2016 and Korean Patent Application No. 10-2015-0137334 filedon Sep. 30, 2015 with the Korean Intellectual Property Office, thedisclosures of which are incorporated herein by reference in theirentirety.

BACKGROUND

Apparatuses consistent with exemplary embodiments relate to a lightemitting device package.

Semiconductor light emitting devices are widely seen as next generationlighting sources having many advantages such as relatively longlifespans, low degrees of power consumption, rapid response speeds, andenvironmental friendliness, and have come to prominence as an importanttype of light source for use in various products such as in generallighting devices and in the backlights of display devices. Inparticular, nitride-based light emitting devices based on Group IIInitrides, such as gallium nitride (GaN), aluminum gallium nitride(AlGaN), indium gallium nitride (InGaN), and indium aluminum galliumnitride (InAlGaN), play an important role as semiconductor lightemitting devices outputting blue or ultraviolet light.

Thus, as light emitting devices (LEDs) have extended to various fieldsfor the purpose of lighting (or illumination), miniaturized packages arerequired to secure a degree of freedom of design fitting respectivepurposes.

SUMMARY

An aspect may provide a miniaturized light emitting device packagecapable of realizing various colors. An aspect may provide aminiaturized light emitting device package including an expanded bondingpad.

According to an example embodiment, there is provided a light emittingdevice package which may include: a light emitting structure including aplurality of light emitting regions configured to emit light,respectively; a plurality of light adjusting layers formed above thelight emitting regions to change characteristics of the light emittedfrom the light emitting regions, respectively; a plurality of electrodesconfigured to control the light emitting regions to emit the light,respectively; and an isolation insulating layer disposed between thelight emitting regions to insulate the light emitting regions from oneanother, the isolation insulating layer forming a continuous structurewith respect to the light emitting regions.

According to an example embodiment, there is provided a light emittingdevice package which may include: a light emitting structure dividedinto a plurality of light emitting regions configured to emit light,respectively; a plurality of light adjusting layers formed above thelight emitting regions to convert characteristics of the light emittedfrom the light emitting regions, respectively; and a plurality ofelectrodes disposed opposite to the light adjusting layers with respectto light emitting structure and configured to respectively control thelight emitting regions to emit the light, wherein the light emittingstructure forms a single chip.

According to an example embodiment, there is provided a method ofmanufacturing a light emitting device package. The method may include:providing a substrate; growing, on the substrate, an epitaxial layercomprising a first conductivity-type semiconductor layer, an activelayer and a second conductivity-type semiconductor layer; forming alight emitting structure comprising a plurality of light emittingregions and corresponding to an individual chip, in the epitaxial layer;forming a plurality of electrodes configured to control the lightemitting regions on a side of the light emitting structure; forming anisolation insulating layer comprising side insulation portions disposedbetween the light emitting regions; and forming a plurality of lightadjusting layers above the light emitting regions, respectively, whereinthe light adjusting layers are disposed opposite to the electrodes withrespect to the light emitting structure.

BRIEF DESCRIPTION OF DRAWINGS

The above and other aspects, features, and advantages of the inventiveconcept will be more clearly understood from the following detaileddescription taken in conjunction with the accompanying drawings, inwhich:

FIGS. 1A and 1B are a plan view and a rear view schematicallyillustrating a light emitting device package according to an exampleembodiment;

FIGS. 2A and 2B are cross-sectional views of the light emitting devicepackage illustrated in FIG. 1A, taken along lines I-I′ and II-II′;

FIGS. 3A through 9B are cross-sectional views illustrating a majorprocess of a method of manufacturing a light emitting device packageaccording to an example embodiment;

FIGS. 10A and 10B are a plan view and a rear view schematicallyillustrating a light emitting device package according to an exampleembodiment;

FIGS. 11A and 11B are a plan view and a rear view schematicallyillustrating a light emitting device package according to an exampleembodiment;

FIGS. 12A and 12B are cross-sectional views of the light emitting devicepackage illustrated in FIG. 11A, taken along lines III-III′ and IV-IV′;

FIGS. 13A and 13B are a plan view and a rear view schematicallyillustrating a light emitting device package according to an exampleembodiment;

FIGS. 14A and 14B are a plan view and a rear view schematicallyillustrating a light emitting device package according to an exampleembodiment;

FIGS. 15A and 15B are cross-sectional views of the light emitting devicepackage according to an example embodiment;

FIGS. 16A and 16B are cross-sectional views of the light emitting devicepackage according to an example embodiment;

FIGS. 17A and 17B are cross-sectional views of the light emitting devicepackage according to an example embodiment;

FIGS. 18A and 18B are a plan view and a rear view schematicallyillustrating a light emitting device package according to an exampleembodiment;

FIGS. 19A and 19B are cross-sectional views of the light emitting devicepackage illustrated in FIG. 18A, taken along lines V-V′ and VI-VI′;

FIGS. 20A and 20B are a plan view and a rear view schematicallyillustrating a light emitting device package according to an exampleembodiment;

FIGS. 21A and 21B are cross-sectional views of the light emitting devicepackage illustrated in FIG. 20A, taken along lines VII-VII′ andVIII-VIII′;

FIGS. 22A through 25B are views illustrating a process of a method ofmanufacturing a light emitting device package according to an exampleembodiment;

FIGS. 26A and 26B are a plan view and a rear view schematicallyillustrating a light emitting device package according to an exampleembodiment;

FIGS. 27A and 27B are a plan view and a rear view schematicallyillustrating a light emitting device package according to an exampleembodiment;

FIGS. 28A and 28B are cross-sectional views of the light emitting devicepackage illustrated in FIG. 27A, taken along lines X-X′ and XI-XI′;

FIG. 29 is a perspective view schematically illustrating a display panelincluding a light emitting device package according to an exampleembodiment.

DETAILED DESCRIPTION

Hereinafter, example embodiments of the inventive concept will bedescribed as follows with reference to the attached drawings.

The present inventive concept may, however, be exemplified in manydifferent forms and should not be construed as being limited to thespecific embodiments set forth herein. Rather, these embodiments areprovided so that this disclosure will be thorough and complete, and willfully convey the scope of the disclosure to those skilled in the art.

Throughout the specification, it will be understood that when anelement, such as a layer, region or wafer (substrate), is referred to asbeing “above,” “on,” “connected to,” or “coupled to” another element, itcan be directly “above,” “on,” “connected to,” or “coupled to” the otherelement or other elements intervening therebetween may be present. Incontrast, when an element is referred to as being “directly above,”“directly on,” “directly connected to,” or “directly coupled to” anotherelement, there may be no elements or layers intervening therebetween.Like numerals refer to like elements throughout. As used herein, theterm “and/or” includes any and all combinations of one or more of theassociated listed items.

It will be apparent that though the terms first, second, third, etc. maybe used herein to describe various members, components, regions, layersand/or sections, these members, components, regions, layers and/orsections should not be limited by these terms. These terms are only usedto distinguish one member, component, region, layer or section fromanother region, layer or section. Thus, a first member, component,region, layer or section discussed below could be termed a secondmember, component, region, layer or section without departing from theteachings of the example embodiments.

Spatially relative terms, such as “above,” “upper,” “below,” and “lower”and the like, may be used herein for ease of description to describe oneelement's relationship to another element(s) as shown in the figures. Itwill be understood that the spatially relative terms are intended toencompass different orientations of the device in use or operation inaddition to the orientation depicted in the figures. For example, if thedevice in the figures is turned over, elements described as “above,” or“upper” other elements would then be oriented “below,” or “lower” theother elements or features. Thus, the term “above” can encompass boththe above and below orientations depending on a particular direction ofthe figures. The device may be otherwise oriented (rotated 90 degrees orat other orientations) and the spatially relative descriptors usedherein may be interpreted accordingly.

The terminology used herein is for describing particular embodimentsonly and is not intended to be limiting. As used herein, the singularforms “a,” “an,” and “the” are intended to include the plural forms aswell, unless the context clearly indicates otherwise. It will be furtherunderstood that the terms “comprises,” and/or “comprising” when used inthis specification, specify the presence of stated features, integers,steps, operations, members, elements, and/or groups thereof, but do notpreclude the presence or addition of one or more other features,integers, steps, operations, members, elements, and/or groups thereof.

Hereinafter, embodiments will be described with reference to schematicviews illustrating embodiments. In the drawings, for example, due tomanufacturing techniques and/or tolerances, modifications of the shapeshown may be estimated. Thus, embodiments should not be construed asbeing limited to the particular shapes of regions shown herein, forexample, to include a change in shape results in manufacturing. Thefollowing embodiments may also be constituted by one or a combinationthereof.

The contents described below may have a variety of configurations andpropose only a required configuration herein, but are not limitedthereto.

FIGS. 1A and 1B are a plan view and a rear view schematicallyillustrating a light emitting device package according to an exampleembodiment. FIGS. 2A and 2B are cross-sectional views of the lightemitting device package illustrated in FIG. 1A, taken along lines I-I′and II-II′.

Referring to FIGS. 1 through 2B, a light emitting device package 10according to an example embodiment may include three light emittingregions C1, C2, and C3, first and second insulating layers 121 a and 121b, an isolation insulating layer 126, first contact electrodes 123,first connection electrodes 127, three first electrode pads 131 a, 131b, and 131 c, a second connection electrode 128, a second electrode pad132, an encapsulant part 134, three light adjusting layers 150 a, 150 b,and 150 c and a partition 145.

In detail, the light emitting device package 10 may include a lightemitting structure LS including a first conductivity-type semiconductorlayer 113, an active layer 115, and a second conductivity-typesemiconductor layer 117. The light emitting structure LS may be dividedinto three light emitting regions C1, C2, and C3 by the isolationinsulating layer 126. The light emitting structure LS may have a firstsurface provided by the first conductivity-type semiconductor layer 113and a second surface provided by the second conductivity-typesemiconductor layer 117 and opposite to the first surface. The firstsurface is opposite to a surface provided by the first conductivity-typesemiconductor 113 facing the active layer 115, and the second surface isopposite to a surface provided by the second conductivity-typesemiconductor 117 facing the active layer 115.

The isolation insulating layer 126 may extend from the first surface tothe second surface to divide the light emitting structure LS into threelight emitting regions C1, C2, and C3, and form a continuous structurewith respect to the light emitting regions C1, C2, and C3. The isolationinsulating layer 126 also extends below a bottom of each of the lightemitting regions C1, C2, and C3. One surface of the isolation insulatinglayer 126 may be coplanar with the first surface.

The active layers 115 of first to third light emitting regions C1, C2,and C3 may emit light having the same wavelength. For example, theactive layers 115 may emit blue lights with 440 nm-460 nm wavelength orultraviolet (UV) lights with 380 nm-440 nm wavelength.

The light emitting device package 10 may include three first connectionelectrodes 127 respectively provided in the first to third lightemitting regions C1, C2, and C3 and connected to the firstconductivity-type semiconductor layers 113 in the light emitting regionsC1, C2, and C3, respectively. Each of the first connection electrodes127 is formed to penetrate through the second conductivity-typesemiconductor layer 117 and the active layer 115 to be connected to thefirst conductivity-type semiconductor layer 113 in each of the lightemitting regions C1, C2, and C3.

The light emitting device package 10 may also include the first contactelectrodes 123 disposed between the first conductivity-typesemiconductor layers 113 and the first connection electrodes 127,respectively, the first electrode pads 131 a, 131 b, and 131 c disposedon the first connection electrodes 127 and provided by the number equalto the number of the light emitting regions C1, C2, and C3,respectively, the second connection electrode 128 commonly connected tothe second conductivity-type semiconductor layers 117 of the first tothird light emitting regions C1, C2, and C3, the second contactelectrodes 124 disposed between the second conductivity-typesemiconductor layers 117 and the second connection electrode 128,respectively, and the second electrode pad 132 disposed in the samedirection as that of the first electrode pads 131 a, 131 b, and 131 c,and provided on the second connection electrode 128.

The first connection electrode 127 connected to the second lightemitting region C2 disposed at the center may have a portion extendingto cover a portion of the neighboring third light emitting region C3,and the first electrode pad 131 b may be provided on the extendedportion. The second connection electrode 128 may be integrally disposedacross the first to third light emitting regions C1, C2, and C3. Thefirst connection electrodes 127 may be connected through first throughholes H1 in the insulating layers 121 b and 126 to the firstconductivity-type semiconductor layer 113. The second connectionelectrode 128 may be connected through second through holes H2 in theinsulating layers 121 b and 126 to the second conductivity-typesemiconductor layers 117. The first electrode pads 131 a, 131 b, and 131c, and the second electrode pad 132 may be disposed on the secondsurface of the light emitting structure LS. The first electrode pads 131a, 131 b, and 131 c, and the second electrode pad 132 may be disposed tobe adjacent to vertices of the second surface of the light emittingstructure LS.

The first conductivity-type semiconductor layer 113 may be an n-typesemiconductor layer, the second conductivity-type semiconductor layer117 may be a p-type semiconductor layer, and the second electrode pads132 may be a common anode connected to p-type semiconductor layers ofthe first to third light emitting regions C1, C2, and C3. Alternatively,in an example embodiment, the first conductivity-type semiconductorlayer 113 may be a p-type semiconductor layer, the secondconductivity-type semiconductor layer 117 may be an n-type semiconductorlayer, and the second electrode pad 132 may be a common cathodeconnected to n-type semiconductor layers of the first to third lightemitting regions C1, C2, and C3.

The light emitting device package 10 may include the first and secondinsulating layers 121 a and 121 b electrically insulating the firstconnection electrodes 127 from the second conductivity-typesemiconductor layers 117 and the active layers 115, the encapsulant part134 surrounding the light emitting structure LS, the first electrodepads 131 a, 131 b, and 131 c, and the second electrode pad 132, andexposing end portions of the first electrode pads 131 a, 131 b, and 131c, and the second electrode pad 132, wavelength conversion layers 151 a,151 b, and 151 c provided on the first to third light emitting regionsC1, C2, and C3 and respectively converting a wavelength of light emittedfrom the first to third light emitting regions C1, C2, and C3, thefilter layers 153 a, 153 b, and 153 c provided on the wavelengthconversion layers 151 a, 151 b, and 151 c and selectively blocking lightemitted from at least one of the first to third light emitting regionsC1, C2, and C3, and the partition 145 disposed between the wavelengthconversion layers 151 a, 151 b, and 151 c and between the filter layers153 a, 153 b, and 153 c.

The partition 145 may be disposed on the isolation insulating layer 126in such a manner that it is connected to the isolation insulating layer126. The partition 145 may also form a continuous structure with respectto the wavelength conversion layers 151 a, 151 b, and 151 c and thefilter layers 153 a, 153 b, and 153 c like the isolation insulatinglayer 126 forming a continuous structure with respect to the lightemitting regions C1, C2, and C3. The partition 145 may be formed suchthat a portion of the isolation insulating layer is inserted into thepartition 145. The partition 145 may include a light blocking material,so that lights emitted through the wavelength conversion layers 151 a,151 b, and 151 c do not interfere with one another. For example, thepartition 145 may include a silicon (Si), a black matrix resin or thelike. The first wavelength conversion layer 151 a and the first filterlayer 153 a may form the first light adjusting layer 150 a, the secondwavelength conversion layer 151 b and the second filter layer 153 b mayform the second light adjusting layer 150 b, and the third wavelengthconversion layer 151 c and the third filter layer 153 c may form thethird light adjusting layer 150 c.

In a case where the first to third light emitting regions C1, C2, and C3emit ultraviolet (UV) light, the first wavelength conversion layer 151 aincludes a red phosphor, the second wavelength conversion layer 151 bincludes a green phosphor, and the third wavelength conversion layer 151c includes a blue phosphor, the filter layers 153 a, 153 b, and 153 cmay selectively block UV light emitted from the first to third lightemitting regions C1, C2, and C3, and allow red light, green light, andblue light emitted from the wavelength conversion layers 151 a, 151 b,and 151 c to be transmitted therethrough.

Alternatively, in a case where the first to third light emitting regionsC1, C2, and C3 emit blue light, the first wavelength conversion layer151 a includes a red phosphor, the second wavelength conversion layer151 b includes a green phosphor, and the third wavelength conversionlayer 151 c includes a green phosphor having a concentration less thanthat of the second wavelength conversion layer 151 b, the first andsecond filter layers 153 a and 153 b may selectively block blue lightemitted from the first and second light emitting regions C1 and C2 andallow red light and green light emitted from the first and secondwavelength conversion layers 151 a and 151 b to be transmittedtherethrough. The third filter layer 153 c may allow blue light emittedfrom the third light emitting region C3 to be transmitted therethrough.

Also, the filter layers 153 a, 153 b, and 153 c may selectively block apredetermined wavelength region of light emitted from the plurality ofwavelength conversion layers 151 a, 151 b, and 151 c, and thus, a fullwidth at half maximum (FWHM) of light emitted from the wavelengthconversion layers 151 a, 151 b, and 151 c may be reduced. The wavelengthconversion layers 151 a, 151 b, and 151 c may include variouscombinations of phosphors without being limited to the exampleembodiments described above.

FIGS. 3A through 9B are cross-sectional views illustrating a method ofmanufacturing the light emitting device package 10 according to anexample embodiment. In detail, the method of manufacturing the lightemitting device package 10 relates to a method of manufacturing awafer-level chip-scale package. Hereinafter, some cross-sections of asubstrate (or wafer) will be magnified to be illustrated to helpunderstanding in major process drawings. FIGS. 3A through 9A arecross-sectional views taken along line I-I′ of FIG. 1A, and FIGS. 3Bthrough 9B are cross-sectional views taken along line II-II′ of FIG. 1A.

Referring to FIGS. 3A and 3B, the method of manufacturing the lightemitting device package 10 may start with an operation of preparing asubstrate 101 on which a light emitting structure LS including a firstconductivity-type semiconductor layer 113, an active layer 115, and asecond conductivity-type semiconductor layer 117 is formed.

The substrate 101 may be an insulating substrate, a conductivesubstrate, or a semiconductor substrate, as necessary. For example, thesubstrate 101 may be formed of sapphire, SiC, Si, MgAl₂O₄, MgO, LiAlO₂,LiGaO₂, or GaN.

The light emitting structure LS may be an epitaxial layer of a Group IIInitride-based semiconductor layer formed on the substrate 101. The firstconductivity-type semiconductor layer 113 may be a nitride semiconductorsatisfying n-type In_(x)Al_(y)Ga_(1-x-y)N, where 0≤x<1, 0≤y<1, and0≤x+y<1, and an n-type impurity may be Si, Ge, Se, or Te. The activelayer 115 may have a multi-quantum well (MQW) structure in which quantumwell layers and quantum barrier layers are alternately stacked. Forexample, the quantum well layers and the quantum barrier layers may beformed of In_(x)Al_(y)Ga_(1-x-y)N, where 0≤x≤1, 0≤y≤1, and 0≤x+y≤1,having different compositions. In a specific example, the quantum welllayers may be formed of In_(x)Ga_(1-x-y)N, where 0<x≤1, and the quantumbarrier layers may be formed of GaN or AlGaN. The secondconductivity-type semiconductor layer 117 may be a nitride semiconductorlayer satisfying p-type In_(x)Al_(y)Ga_(1-x-y)N, where 0≤x<1, 0≤y<1, and0≤x+y<1, and a p-type impurity may be Mg, Zn, or Be. A buffer layer maybe formed between the substrate 101 and the first conductivity-typesemiconductor layer 113. The buffer layer may be formed ofIn_(x)Al_(y)Ga_(1-x-y)N, where 0≤x≤1, and 0≤y≤1. For example, the bufferlayer may be formed of AlN, AlGaN, or InGaN. As required, the bufferlayer may be formed by combining a plurality of layers having differentcompositions, or may be formed of a single layer in which compositionsare gradually changed.

Thereafter, portions of the second conductivity-type semiconductor layer117 and the active layer 115 are removed to form an opening so that aportion of the first conductivity-type semiconductor layer 113 isexposed, and a first insulating layer 121 a may subsequently bedeposited. One or a plurality of openings may be formed in each lightemitting region.

Referring to FIGS. 4A and 4B, first and second contact electrodes 123and 124 formed of a conductive material may be formed on a portion ofthe first insulating layer 121 a from which the portion of the firstinsulating layer 121 a has been removed.

First, the portion of the first insulating layer 121 a formed on thesecond conductivity-type semiconductor layer 117 is removed, and thesecond contact electrode 124 may be formed to be electrically connectedto the second conductivity-type semiconductor layer 117. Next, a secondinsulating layer 121 b covering the second contact electrode 124 and thefirst insulating layer 121 a may be formed. Thereafter, portions of thefirst and second insulating layers 121 a and 121 b within the openingmay be removed, and a first contact electrode 123 may be formed on thefirst conductivity-type semiconductor layer 113 within the opening sothat the first contact electrode 123 is electrically connected to thefirst conductivity-type semiconductor layer 113.

The first and second contact electrodes 123 and 124 may be reflectiveelectrodes including at least one of Ag, Al, Ni, Cr, Cu, Au, Pd, Pt, Sn,W, Rh, Ir, Ru, Mg, Zn, and an alloy including these elements.

Referring to FIGS. 5A and 5B, an isolation process of dividing the lightemitting structure LS into a plurality of light emitting regions and aprocess of forming a first connection electrode and a second connectionelectrode may be performed.

Referring to FIG. 5A, an isolation region I may be formed to penetratethrough the second insulating layer 121 b, the second contact electrode124, and the light emitting structure LS between the first contactelectrode 123 and the second contact electrode 124. Through such aprocess, the light emitting structure LS may be divided into a pluralityof light emitting regions and supported by the substrate 101.

Referring to FIG. 5B, the isolation region I may be formed in everythree light emitting regions C1, C2, and C3. The light emittingstructure LS may be divided into individual light emitting chips by theisolation region I. A sub-isolation region Ia may be formed betweenthree light emitting regions C1, C2, and C3. The isolation process maybe provided as a process of forming the isolation region I using ablade, but is not limited thereto. The sub-isolation region Ia may beformed through an additional process or may be formed through the sameprocess as that of the isolation region I. The sub-isolation region Iamay be formed to be narrower than the isolation region I.

The light emitting regions C1, C2, and C3 obtained through the isolationprocess may have trapezoid shapes. Thus, the light emitting regions C1,C2, and C3 may have side surfaces sloped with respect to an uppersurface of the substrate 101.

Subsequently, an isolation insulating layer 126 may be formed on theside surfaces of the light emitting regions C1, C2, and C3 and on thesecond insulating layer 121 b. In FIG. 5B, it is illustrated that thesub-isolation region Ia is filled with the isolation insulating layer126, but is not limited thereto.

The isolation insulating layer 126 may be formed of any material as longas it has electrically insulating properties, and a material having lowlight absorption may be used. The isolation insulating layer 126 mayinclude, for example, a silicon oxide, a silicon oxynitride, or asilicon nitride. In an example embodiment, the isolation insulatinglayer 126 may include light reflective materials and have a lightreflective structure. The isolation insulating layer 126 may have amultilayer reflective structure in which a plurality of insulatinglayers having different refractive indices are alternately stacked. Themultilayer reflective structure may be a distributed Bragg reflector(DBR) in which a first insulating layer having a first refractive indexand a second insulating layer having a second refractive index arealternatively stacked. The multilayer reflective structure may be astructure in which a plurality of insulating layers having differentrefractive indices are repeatedly stacked two to one hundred times. Forexample, a plurality of insulating layers having different refractiveindices may be repeatedly stacked three to seventy times, andpreferably, but not necessarily, four to fifty times. The plurality ofinsulating layers of the multilayer reflective structure may each be anoxide or a nitride such as SiO₂, SiN, SiO_(x)N_(y), TiO₂, Si₃N₄, Al₂O₃,ZrO₂, TiN, AlN, TiAlN, TiSiN, or combinations thereof.

Thereafter, portions of the isolation insulating layer 126 and thesecond insulating layer 121 b may be removed so that portions of thefirst and second contact electrodes 123 and 124 are exposed throughfirst through holes H1 and second through holes H2. A first connectionelectrode 127 connected to the exposed first contact electrode 123 and asecond connection electrode 128 connected to the second contactelectrode 124 may be formed. The first connection electrode 127 may beformed in each of the light emitting regions, and the second connectionelectrode 128 may be integrally formed across three light emittingregions.

Referring to FIGS. 6A and 6B, a first electrode pad 131 a connected tothe first connection electrode 127 and a second electrode pad 132connected to the second connection electrode 128 may be formed. Thefirst electrode pad 131 a and the second electrode pad 132 may be formedthrough a plating process. The first electrode pad 131 a and the secondelectrode pad 132 may be formed of copper (Cu). However, a material ofthe first electrode pad 131 a and the second electrode pad 132 is notlimited thereto, and the first electrode pad 131 a and the secondelectrode pad 132 may be formed of a conductive material other thancopper (Cu).

An encapsulant part 134 may be formed between the first electrode pad131 a and the second electrode pad 132 to fill the isolation region I(refer to FIGS. 6A and 6B). The encapsulant part 134 may be formedthrough a process of applying a molding material to cover upper surfacesof the first electrode pad 131 a and the second electrode pad 132 and aprocess of exposing end portions of the first electrode pad 131 a andthe second electrode pad 132 using a planarization method such asgrinding, or the like. In order to support the light emitting structureLS, the encapsulant part 134 has a high Young's modulus, and in order todissipate heat generated by the light emitting structure, theencapsulant part 134 may be formed of a material having high heatconductivity. The encapsulant part 134 may be formed of an epoxy resinor a silicone resin, for example. Also, the encapsulant part 134 mayinclude light-reflective particles for reflecting light. Thelight-reflective particles may be formed of titanium dioxide (TiO₂)and/or an aluminum oxide (Al₂O₃), but a material thereof is not limitedthereto.

Referring to FIGS. 7A and 7B, a process of removing the substrate 101may be performed so that the first conductivity-type semiconductor layer113 and the isolation insulating layer 126 are exposed.

A support substrate 140 may be attached to the encapsulant part 134. Abonding layer 138 such as a UV-curing material may be used for thepurpose of bonding the support substrate 140. Thereafter, in a casewhere the substrate 101 is a transparent substrate such as sapphire, thesubstrate 101 may be separated from the light emitting structure LSthrough laser lift-off (LLO). A laser used in the LLO process may be atleast any one of a 193 excimer laser, a 248 excimer laser, a 308 excimerlaser, an Nd:YAG laser, a He—Ne laser, and an Ar ion laser. Also, in acase where the substrate 101 is an opaque substrate such as silicon(Si), the substrate 101 may be removed through grinding, polishing, dryetching, or any combinations thereof.

If necessary, concave and convex structures may be formed on an uppersurface of the first conductivity-type semiconductor layer 113 in orderto increase light emission efficiency. The concave and convex structuresmay be formed through a wet etching method using a solution includingKOH or NaOH or a dry etching method using an etchant gas including aBCl₃ gas.

Referring to FIGS. 8A and 8B, a partition 145 may be formed between thelight emitting regions. Also, wavelength conversion layers 151 a, 151 b,and 151 c, and filter layers 153 a, 153 b, and 153 c may be sequentiallyformed on the first conductivity-type semiconductor layer 113.

The wavelength conversion layers 151 a, 151 b, and 151 c may includevarious wavelength conversion materials such as a phosphor or a quantumdot. The wavelength conversion layers 151 a, 151 b, and 151 c mayinclude different phosphors to emit light in different colors.

Referring to FIGS. 9A and 9B, the resultant structure is finally cut toindividual packages. The cutting process may be performed in such amanner that the support substrate 140 is removed, an adhesive tape isattached, and the resultant structure is divided into individualpackages through a blade cutting method.

A chip scale package obtained through the foregoing process may have apackage size substantially at the same level as that of a semiconductorlight emitting device (that is, an LED chip). Thus, when the package isused in a lighting device, a high amount of light per unit area may beobtained. When the package is used in a display panel, a pixel size anda pixel pitch may be reduced. Also, since every process is performed ata wafer level, the manufacturing method is appropriate formass-production, and an optical structure including a wavelengthconversion layer and/or a filter layer may be advantageously integrallyformed with an LED chip.

FIGS. 10A and 10B are a plan view and a rear view schematicallyillustrating a light emitting device package according to an exampleembodiment.

The light emitting device package 10A illustrated in FIGS. 10A and 10Bare different from the light emitting device package 10 described abovewith reference to FIGS. 1A through 2B only in a layout structure of aplurality of light emitting regions C1′, C2′, and C3′, and thus, it willbe described briefly.

Referring to FIGS. 10A and 10B, the light emitting device package 10Aaccording to an example embodiment may include a light emittingstructure divided into three light emitting regions C1′, C2′, and C3′.The first light emitting region C1′ may be disposed in one direction,and the second and third light emitting regions C2′ and C3′ may bedisposed to be parallel to each other in a direction substantiallyperpendicular to a longer side of the first light emitting region C1′.

The light emitting device package 10A may include first connectionelectrodes 227, three first electrode pads 231 a, 231 b, and 231 c, asecond connection electrode 228, a second electrode pad 232, anencapsulant part 234, three light adjusting layers 250 a, 250 b, and 205c, and a partition 245. Each of the three light adjusting layers 250 a,250 b, and 205 c may include wavelength conversion layer and filterlayer. The first connection electrodes 227 may be connected throughfirst through holes H1 to first conductivity-type semiconductor layers.The second connection electrode 228 may be connected through secondthrough holes H2 to second conductivity-type semiconductor layers. Thefirst electrode pad 231 c and the second electrode pad 232 may bedisposed below the first light emitting region C1′, the first electrodepad 231 a may be disposed below the second light emitting region C2′,and the first electrode pad 231 b may be disposed below the third lightemitting region C3′.

FIGS. 11A and 11B are a plan view and a rear view schematicallyillustrating a light emitting device package 10B according to an exampleembodiment. FIGS. 12A and 12B are cross-sectional views of the lightemitting device package 10B illustrated in FIG. 11A, taken along linesIII-III′ and IV-IV′. The light emitting device package 10B illustratedin FIGS. 11A through 12B has a structure including light emittingregions different from the number of light emitting regions of the lightemitting device package 10 described above with reference to FIGS. 1Athrough 2B, and thus, the light emitting device package 10B illustratedin FIGS. 11A through 12B will be described briefly. The descriptions ofthe light emitting device package 10 described above with reference toFIGS. 1A through 2B may be applied in the same manner to the presentexample embodiment unless they contradict.

Referring to FIGS. 11A through 12B, the light emitting device package10B according to an example embodiment may include four light emittingregions C1, C2, C3, and C4, first and second insulating layers 321 a and321 b, an isolation insulating layer 326, first contact electrodes 323,first connection electrodes 327, first electrode pads 331 a, 331 b, 331c, and 331 d, second contact electrodes 324, a second connectionelectrode 328, a second electrode pad 332, an encapsulant part 334, fourlight adjusting layers 350 a, 350 b, 350 c, and 350 d, and a partition345.

In detail, the light emitting device package 10B may include a lightemitting structure LS including a first conductivity-type semiconductorlayer 313, an active layer 315, and a second conductivity-typesemiconductor layer 317. The light emitting structure LS may be dividedinto four light emitting regions C1, C2, C3, and C4 by an isolationinsulating layer 326.

The light emitting device package 10B may include four first connectionelectrodes 327 respectively provided in each of the light emittingregions C1, C2, C3, and C4, and connected to the first conductivity-typesemiconductor layers 313 by penetrating through the secondconductivity-type semiconductor layers 317 and the active layers 315,first contact electrodes 323 respectively disposed between the firstconductivity-type semiconductor layers 313 and the first connectionelectrodes 327, first electrode pads 331 a, 331 b, 331 c, and 331 drespectively disposed on the first connection electrodes 327 andprovided by the number equal to the number of the light emittingregions, a second connection electrode 328 commonly connected to thesecond conductivity-type semiconductor layers 317 of the light emittingregions C1, C2, C3, and C4, second contact electrodes 324 respectivelydisposed between the second conductivity-type semiconductor layers 317and the second connection electrode 328, and a second electrode pad 332disposed in the same direction as that of the first electrode pads 331a, 331 b, 331 c, and 331 d and provided on the second connectionelectrode 328.

The first connection electrode 327 connected to the light emittingregion C3 disposed at an inner side may have a portion extending tocover a portion of the neighboring light emitting region C4, and thefirst electrode pad 331 c may be provided on the extended portion. Thesecond connection electrode 328 may be integrally disposed across fourlight emitting regions C1, C2, C3, and C4.

The first connection electrodes 327 may be connected through firstthrough holes H1 to the first conductivity-type semiconductor layers313, respectively. The second connection electrode 328 may be connectedthrough second through holes H2 to the second conductivity-typesemiconductor layers 317. The first electrode pads 331 a, 331 c, and 331d and the second electrode pad 332 may be disposed to be adjacent to avertex of the light emitting structure LS. The first electrode pad 331 bmay be disposed to be adjacent to an edge of the light emittingstructure LS.

The light emitting device package 10B may include wavelength conversionlayers 351 a, 351 b, 351 c, and 351 d provided on the light emittingregions C1, C2, C3, and C4 and converting light emitted from the lightemitting regions C1, C2, C3, and C4, filter layers 353 a, 353 b, 353 c,and 353 d provided on the wavelength conversion layers 351 a, 351 b, 351c, and 351 d and selectively blocking light emitted from at least one ofthe light emitting regions C1, C2, C3, and C4, and a partition 345disposed between the wavelength conversion layers 351 a, 351 b, 351 c,and 351 d and the filter layers 353 a, 353 b, 353 c, and 353 d. Thefirst wavelength conversion layer 351 a and the first filter layer 353 amay form a first light adjusting layer 350 a, the second wavelengthconversion layer 351 b and the second filter layer 353 b may form asecond light adjusting layer 350 b, the third wavelength conversionlayer 351 c and the first filter layer 353 c may form a third lightadjusting layer 350 c, and the fourth wavelength conversion layer 351 dand the first filter layer 353 d may form a fourth light adjusting layer350 d.

The light emitting regions C1, C2, C3, and C4 may emit UV light, and thefirst wavelength conversion layer 351 a may include a red phosphor, thesecond wavelength conversion layer 351 b may include a green phosphor,the third wavelength conversion layer 351 c may include a blue phosphor,and the fourth wavelength conversion layer 351 d may include phosphorsmixed to emit white light. In this case, the filter layers 353 a, 353 b,353 c, and 353 d may selectively block UV light emitted from the lightemitting regions C1, C2, C3, and C4, and allow red light, green light,blue light, and white light emitted from the wavelength conversionlayers 351 a, 351 b, 351 c, and 351 d to be transmitted therethrough. Inaddition, the filter layers 353 a, 353 b, 353 c, and 353 d mayselectively block a certain wavelength range of light emitted from thewavelength conversion layers 351 a, 351 b, 351 c, and 351 d, and thus, afull width at half maximum of light emitted from the wavelengthconversion layers 351 a, 351 b, 351 c, and 351 d may be reduced.

FIGS. 13A and 13B are a plan view and a rear view schematicallyillustrating a light emitting device package 10C according to an exampleembodiment. The light emitting device package 10C illustrated in FIGS.13A and 13B is only different from the light emitting device package 10Bdescribed above with reference to FIGS. 11A through 12B in a layoutstructure of the plurality of light emitting regions C1, C2, C3, and C4,and thus, the light emitting device package 10C illustrated in FIGS. 13Aand 13B will be described briefly.

Referring to FIGS. 13A and 13B, the light emitting device package 10Caccording to an example embodiment may include a light emittingstructure divided into four light emitting regions C1, C2, C3, and C4.The four light emitting regions C1, C2, C3, and C4 may be disposed intwo rows and two columns.

The light emitting device package 10C may include first connectionelectrodes 427 respectively disposed in each of the light emittingregions, first electrode pads 431 a, 431 b, 431 c, and 431 d disposed onthe first connection electrodes 427, respectively, a second connectionelectrode 428 disposed across the four light emitting regions C1, C2,C3, and C4, a second electrode pad 432 disposed on the second connectionelectrode 428, an encapsulant part 434, four light adjusting layers 450a, 450 b, 450 c, and 450 d, and a partition 445. Each of the four lightadjusting layers 450 a, 450 b, 450 c, and 450 d may include wavelengthconversion layer and filter layer.

The first connection electrodes 427 may be connected through firstthrough holes H1 to first conductivity-type semiconductor layers,respectively. The second connection electrode 428 may be connectedthrough second through holes H2 to second conductivity-typesemiconductor layers. The second electrode pad 432 may be disposed to beat or adjacent to the center of the light emitting structure, and fourfirst electrode pads 431 a, 431 b, 431 c, and 431 d may be disposed tobe adjacent vertices of the light emitting structure. The firstelectrode pad 431 a may be disposed below the first light emittingregion C1′, the first electrode pad 431 b may be disposed below thesecond light emitting region C2′, the first electrode pad 431 c may bedisposed below the third light emitting region C3′, and the firstelectrode pad 431 d may be disposed below the fourth light emittingregion C4′. The second electrode pad 432 may be disposed across verticesof the light emitting regions C1′, C2′, C3′, and C4′.

FIGS. 14A and 14B are a plan view and a rear view schematicallyillustrating a light emitting device package 10D according to an exampleembodiment. The light emitting device package 10D illustrated in FIGS.14A and 14B is different from the light emitting device package 10described above with reference to FIGS. 1A through 2B only in the numberof plurality of light emitting regions, and thus the light emittingdevice package illustrated in FIGS. 14A and 14B will be describedbriefly.

Referring to FIGS. 14A and 14B, the light emitting device package 10Daccording to an example embodiment may include a light emittingstructure divided into two light emitting regions C1 and C2.

The light emitting device package 10D may include first connectionelectrodes 527 disposed in each of the light emitting regions, firstelectrode pads 531 a and 531 b disposed on the first connectionelectrodes 527, respectively, a second connection electrode 528 disposedto across the two light emitting regions C1 and C2, a second electrodepad 532 disposed on the second connection electrode 528, an encapsulantpart 534, light adjusting layers 550 a and 550 b, and a partition 545.Each of light adjusting layers 550 a and 550 b may include a wavelengthconversion layer and a filter layer. The second electrode pad 532 may bedisposed to be longer than the first electrode pads 531 a and 531 b. Thefirst connection electrodes 527 may be connected through first throughholes H1 to first conductivity-type semiconductor layers, respectively.The second connection electrode 528 may be connected through secondthrough holes H2 to second conductivity-type semiconductor layers.

FIGS. 15A and 15B are cross-sectional views schematically illustrating alight emitting device package 10E according to an example embodiment.

Referring to FIGS. 15A and 15B, a light emitting device package 10E mayhave a structure further including a glass layer 160 disposed on thelight adjusting layers 150 a, 150 b, and 150 c of the light emittingdevice package 10 of FIGS. 1A through 2B. The glass layer 160 mayprevent the light adjusting layers 150 a, 150 b, and 150 c from beingdegraded by atmospheric moisture or a gas. A concave and convexstructure for improvement of light extraction efficiency may be formedon an upper surface of the glass layer 160.

FIGS. 16A and 16B are cross-sectional views schematically illustrating alight emitting device package 10F according to an example embodiment.

Referring to FIGS. 16A and 16B, a light emitting device package 10F mayfurther include a glass layer 160 and a buffer layer 112, in comparisonwith the light emitting device package 10 of FIGS. 1A through 2B. Theglass layer 160 is disposed above light adjusting layers 150 a, 150 b,and 150 c to prevent the light adjusting layers 150 a, 150 b, and 150 cfrom being degraded by atmospheric moisture or a gas. A concave andconvex structure for the improvement of light extraction efficiency maybe formed on an upper surface of the glass layer 160. The buffer layer112 may be disposed between each of the wavelength conversion layers 151a, 151 b, and 151 c and each of first conductivity-type semiconductorlayers 113. In addition, the buffer layer 112 may be disposed between apartition 145 and an isolation insulating layer 126. The isolationinsulating layer 126 may have a form in which a portion of the isolationinsulating layer 126 is inserted into the buffer layer 112. The bufferlayer 112 may be formed on a growth substrate to reduce a defect of alight emitting structure LS, and may remain after the growth substrateis removed. The buffer layer 112 may include a high resistance materialwhich prevents the light emitting regions C1, C2, and C3 from beingelectrically connected to one another. The buffer layer 112 may beformed of In_(x)Al_(y)Ga_(1-x-y)N, where 0≤x≤1, and 0≤y≤1. For example,the buffer layer may be formed of AlN, AlGaN, or InGaN. The buffer layer112 may be formed of a plurality of layers having differentcompositions, or may be formed of a single layer in which compositionsare gradually changed.

FIGS. 17A and 17B are cross-sectional views schematically illustrating alight emitting device package according to an example embodiment.

Referring to FIGS. 17A and 17B, a light emitting device package 10G mayfurther include a glass layer 160 on light adjusting layers 150 a, 150b, and 150 c in a manner different from the light emitting devicepackage 10 of FIGS. 1A through 2B, and may further include a bufferlayer 112 between respective wavelength conversion layers 151 a, 151 b,and 151 c and each of first conductivity-type semiconductor layers 113.The light emitting device package 10G may have a partition 145′ having awidth greater than a width of an upper portion of an isolationinsulating layer 126. The partition 145′ may be formed by patterning asilicon substrate used as a growth substrate. The isolation insulatinglayer 126 may have a form in which a portion of the isolation insulatinglayer 126 is inserted into the partition 145′. A portion of a secondconnection electrode 128′ may be disposed between respective lightemitting regions C1, C2, and C3, below the partition 145′.

FIGS. 18A and 18B are a plan view and a rear view schematicallyillustrating a light emitting device package 10H according to an exampleembodiment. FIGS. 19A and 19B are cross-sectional views of the lightemitting device package 10H illustrated in FIG. 18A, taken along linesV-V′ and VI-VI′.

Referring to FIGS. 18A through 19B, a light emitting device package 10Haccording to an example embodiment may include a light emittingstructure LS having one light emitting region C1.

The light emitting device package 10H may include first and secondconnection electrodes 627 and 628 disposed on the light emitting regionC1, a first electrode pad 631 disposed on the first connection electrode627, a second electrode pad 632 disposed on the second connectionelectrode 628, a molding layer 634, a light adjusting layer 650, apartition 645, and the like.

The light adjusting layer 650 may include a wavelength conversion layer651 and a filter layer 653. The light emitting region C1 may emit UVlight or blue light, and the wavelength conversion layer 651 may includea phosphor or a quantum dot.

The light emitting device package 10H may further include a glass layer660 disposed on the light adjusting layer 650. A concave and convexstructure for improvement of light extraction efficiency may be formedon an upper surface of the glass layer 660.

The first and second electrode pads 631 and 632 may be elongated to beadjacent to a lateral surface of the light emitting structure LS.

FIGS. 20A and 20B are a plan view and a rear view schematicallyillustrating a light emitting device package 20 according to an exampleembodiment. FIGS. 21A and 21B are cross-sectional views of the lightemitting device package 20 illustrated in FIG. 20A taken along linesVII-VII′ and VIII-VIII′.

Referring to FIGS. 20A through 21B, a light emitting device package 20according to an example embodiment may include three light emittingregions C1, C2, and C3, first and second insulating layers 121 a and 121b, an isolation insulating layer 126, first contact electrodes 123,first connection electrodes 127, three first electrode pads 131 a, 131b, and 131 c, second contact electrodes 124, a second connectionelectrode 128, a second electrode pad 132, a first encapsulant part 134,light adjusting layers 150 a, 150 b, and 150 c, and a partition 145 inthe same manner as the light emitting device package 10 in FIGS. 1Athrough 2B.

In addition, the light emitting device package 20 may further include asecond encapsulant part 180 surrounding the light adjusting layers 150a, 150 b, and 150 c, the partition 145, and the first encapsulant part134. The second encapsulant part 180 may include a light transmittingresin. For example, the second encapsulant part 180 may include an epoxyresin. Lower surfaces of first through second electrode pads 131 a, 131b, 131 c, and 132 and a lower surface of the first encapsulant part 134may form a substantially flat plane. The second encapsulant part 180 mayhave a lower surface having a planar form corresponding to the lowersurface of the first encapsulant part 134.

First bonding pads 135 a, 135 b, and 135 c connected to the firstelectrode pads 131 a, 131 b, and 131 c and a second bonding pad 136connected to the second electrode pad 132 may be formed. The firstbonding pads 135 a, 135 b, and 135 c, and the second bonding pad 136 maybe disposed to be extended from the lower surfaces of the first throughsecond electrode pads 131 a, 131 b, 131 c, and 132 to the lower surfaceof the second encapsulant part 180.

In a case where an area of the light emitting structure LS is small dueto a reduction in a chip size, a region in which bonding pads are formedmay be limited to be secured. In this case, the region in which bondingpads are formed may be secured using the second encapsulant part 180.

As sizes of bonding pads 135 a, 135 b, 135 c, and 136 are secured to bea predetermined size or more, for example, a size of a side is 180 um ormore, a light emitting chip may be measured using a conventionalmeasuring device, and an SMT process of mounting a light emitting devicepackage on a package substrate may be easily performed.

FIGS. 22A through 25B are views of each process, illustrating a methodof manufacturing a light emitting device package according to an exampleembodiment.

Referring to FIGS. 22A and 22B, light emitting chips CP may be attachedto a film 190 which may be expanded, in a matrix form. The lightemitting chips CP may be arranged to have a first distance dx1 in afirst direction (x direction), and to have a second distance dy1 in asecond direction (y direction). The light emitting chips CP, forexample, may have a structure the same as the light emitting devicepackage 10 in FIGS. 1A through 2B. The electrode pads 131 a, 131 b, 131c, and 132 of the light emitting chips CP may be attached to be incontact with the film 190.

Referring to FIGS. 23A and 23B, as the film 190 is stretched in alldirections, a distance of the light emitting chips CP may be widened.Thus, the light emitting chips CP may be arranged to have a thirddistance dx2 in a first direction (x direction), and to have a fourthdistance dy2 in a second direction (y direction). The third distance dx2is greater than the first distance dx1, and the fourth distance dy2 isgreater than the second distance dy1. The third distance dx2 and thefourth distance dy2 may be determined in consideration of sizes ofbonding pads to be subsequently formed.

Referring to FIGS. 24A and 24B, a second encapsulant part 180 coveringthe light emitting chips CP may be formed. The second encapsulant part180 may include an epoxy resin having light-transmitting properties. Thesecond encapsulant part 180, for example, may be coated in a slitcoating method, and then, may be cured. Selectively, a glass layer maybe formed in an upper portion of the second encapsulant part 180.

Referring to FIGS. 25A and 25B, after the film 190 is removed, remainingstructures may be overturned to allow the electrode pads 131 a, 131 b,131 c, and 132 to face upwardly. Next, first bonding pads 135 a, 135 b,and 135 c connected to the first electrode pads 131 a, 131 b, and 131 cand second bonding pads 136 connected to the second electrode pad 132may be formed. The first bonding pads 135 a, 135 b, and 135 c, and thesecond bonding pads 136 may be formed to be extended to a surface of thesecond encapsulant part 180 to have a predetermined size or area.

Next, through cutting to form individual packages, the light emittingdevice package 20 of FIGS. 20A through 21B may be obtained.

FIGS. 26A and 26B are a plan view and a rear view schematicallyillustrating a light emitting device package 20A according to an exampleembodiment.

Referring to FIGS. 26A and 26B, a light emitting device package 20Aaccording to an example embodiment may include a light emittingstructure divided in to four light emitting regions C1′, C2′, C3′, andC4′, in a manner similar to the light emitting device package 10C inFIGS. 13A through 13B. The four light emitting regions C1′, C2′, C3′,and C4′ may be arranged in 2 columns and 2 rows. The light emittingdevice package 20A may include first connection electrodes 427 disposedon respective light emitting regions C1′, C2′, C3′, and C4′, firstelectrode pads 431 a, 431 b, 431 c, and 431 d disposed on the firstconnection electrodes 427, a second connection electrode 428 disposedacross four light emitting regions C1′, C2′, C3′, and C4′, a secondelectrode pad 432 disposed on the second connection electrode 428, amolding part 434, light adjusting layers 450 a, 450 b, 450 c, and 450 d,a partition 445, and the like.

In addition, the light emitting device package 20A may further includean encapsulant part 480 surrounding the light adjusting layers 450 a,450 b, 450 c, and 450 d, the partition 445, and the molding part 434, ina manner similar to the light emitting device package 20 in FIGS. 20Athrough 21B. The encapsulant part 480 may include a light transmittingresin. For example, the encapsulant part 480 may include an epoxy resin.

First bonding pads 435 a, 435 b, 435 c, and 453 d connected to the firstelectrode pads 431 a, 431 b, 431 c, and 431 d, respectively, and asecond bonding pad 436 connected to the second electrode pad 432 may beformed. The first bonding pads 435 a, 435 b, 435 c, and 435 d may beformed to be extended from lower surfaces of the first electrode pads431 a, 431 b, 431 c, and 431 d to a lower surface of the encapsulantpart 480. The second bonding pad 436 may be formed to have a size largerthan the second electrode pad 142 at a predetermined interval from thefirst bonding pads 435 a, 435 b, 435 c, and 435 d.

In a case where an area of the light emitting structure LS is small dueto a reduction in a chip size, a region in which bonding pads are formedmay be limited to be secured. In this case, the region in which bondingpads are formed may be sufficiently secured using the encapsulant part480.

FIGS. 27A and 27B are a plan view and a rear view schematicallyillustrating a light emitting device package 20B according to an exampleembodiment. FIGS. 28A and 28B are cross-sectional views of the lightemitting device package illustrated in FIG. 27A taken along lines X-X′and XI-XI′.

Referring to FIGS. 27A through 28B, a light emitting device package 20Bmay have a structure similar to the light emitting device package 20 inFIGS. 20A through 21B, and may further include a metal layer 129disposed along an edge of the light emitting structure LS, in comparisonwith the light emitting device package 20. The metal layer 129 may bedisposed below a partition 145. A width of the partition 145 located onan edge of the light emitting structure LS may be greater in comparisonwith the light emitting device package 20.

The metal layer 129 may prevent light emitted from the light emittingstructure LS from leaking out through a lateral surface of the lightemitting device package 20B.

FIG. 29 is a perspective view schematically illustrating a display panelincluding a light emitting device package according to an exampleembodiment.

Referring to FIG. 29, a display panel 1000 may include a circuit board1010 including a driving circuit and a control circuit, pixels 1030disposed in a plurality of rows and a plurality of columns on thecircuit board 1010, a protective layer 1050, and a polarizing layer1070. A light emitting device package according to one of the aboveexample embodiments may be used in the pixels 1030. In this case, a sizeof the pixels 1030 and pitches between the pixels 1030 may be formed tobe small, expressing an image of high resolution. For example, in a casewhere the light emitting device package described above with referenceto FIGS. 1A through 2B is employed, three light emitting regions C1, C2,and C3 may be provided as three sub-pixels.

As set forth above, according to example embodiments, a miniaturizedlight emitting device package capable of realizing various colors may beprovided. According to example embodiments, a miniaturized lightemitting device package including an expanded bonding pad may beprovided.

While example embodiments have been shown and described above, it willbe apparent to those skilled in the art that modifications andvariations could be made without departing from the scope of theinventive concept as defined by the appended claims.

What is claimed is:
 1. A light emitting apparatus comprising: a lightemitting structure comprising a plurality of light emitting regionsconfigured to emit light, respectively; a plurality of light adjustinglayers formed above the light emitting regions to change characteristicsof the light emitted from the light emitting regions, respectively; aplurality of electrodes configured to control the light emitting regionsto emit the light, respectively; an isolation insulating layer disposedbetween the light emitting regions to insulate the light emittingregions from one another; and a partition disposed on the isolationinsulating layer and between the light adjusting layers, wherein theisolation insulating layer forms a continuous structure with respect tothe light emitting regions, and extends below a bottom of each of thelight emitting regions, and wherein the partition forms a continuousstructure with respect to the light adjusting layers and overlaps aportion of the light emitting regions.
 2. The light emitting apparatusof claim 1, wherein each of the plurality of light emitting regionscomprises: a first conductivity-type semiconductor layer; a secondconductivity-type semiconductor layer; and an active layer disposedbetween the first conductivity-type semiconductor layer and the secondconductivity-type semiconductor layer.
 3. The light emitting apparatusof claim 2, wherein each of the plurality of light emitting regionsfurther comprises a buffer layer disposed between the partition and thefirst conductivity-type semiconductor layer and contacting thepartition.
 4. The light emitting apparatus of claim 1, wherein each ofthe plurality of light adjusting layers comprises a wavelengthconversion layer configured to convert a wavelength of the light emittedfrom a corresponding light emitting region among the light emittingregions.
 5. The light emitting apparatus of claim 4, wherein thewavelength conversion layer comprises a quantum dot.
 6. The lightemitting apparatus of claim 1, wherein the light emitting structurecomprises: a first conductivity-type semiconductor layer; a secondconductivity-type semiconductor layer; and an active layer disposedbetween the first conductivity-type semiconductor layer and the secondconductivity-type semiconductor layer.
 7. The light emitting apparatusof claim 6, wherein the light emitting structure further comprises abuffer layer disposed between the partition and the firstconductivity-type semiconductor layer and contacting the partition. 8.The light emitting apparatus of claim 6, wherein the plurality ofelectrodes comprises a first contact electrode and a second contactelectrode corresponding to each of the light emitting regions, whereinthe first contact electrode is connected to a corresponding firstconductivity-type semiconductor layer of the light emitting regions, andthe second contact electrode is connected to a corresponding secondconductivity-type semiconductor layer of the light emitting regions. 9.The light emitting apparatus of claim 8, wherein the plurality ofelectrodes further comprise a connection electrode disposed thereon andconnecting the first contact electrodes or the second contactelectrodes.
 10. The light emitting apparatus of claim 8, furthercomprising an insulating layer covering the second contact electrodes,wherein the plurality of electrodes further comprise a plurality ofconnection electrodes disposed thereon the insulating layer andextending horizontally across the light emitting regions.
 11. The lightemitting apparatus of claim 10, wherein the plurality of connectionelectrodes are respectively connected to the first contact electrodes.12. The light emitting apparatus of claim 10, wherein the plurality ofconnection electrodes respectively penetrate through the insulatinglayer.
 13. The light emitting apparatus of claim 10, wherein thepartition is directly connected to the isolation insulating layer. 14.The light emitting apparatus of claim 13, wherein the partitioncomprises a trench in a region connected to the isolation insulatinglayer.
 15. The light emitting apparatus of claim 14, wherein a portionof the isolation insulating layer is inserted into the trench of thepartition.
 16. The light emitting apparatus of claim 1, wherein theisolation insulating layer comprises a plurality of insulating layershaving different refractive indices.
 17. A light emitting apparatuscomprising: a light emitting structure comprising a plurality of lightemitting regions configured to emit light, respectively; a plurality oflight adjusting layers formed above the light emitting regions to changecharacteristics of the light emitted from the light emitting regions,respectively; a partition disposed between the light adjusting layersand overlapping a portion of the light emitting regions; a plurality ofelectrodes configured to control the light emitting regions to emit thelight, respectively; and an isolation insulating layer disposed betweenthe light emitting regions to insulate the light emitting regions fromone another, wherein the isolation insulating layer forms a continuousstructure with respect to the light emitting regions, and extends belowa bottom of each of the light emitting regions.
 18. The light emittingapparatus of claim 17, wherein each of the plurality of light emittingregions comprises: a first conductivity-type semiconductor layer; asecond conductivity-type semiconductor layer; and an active layerdisposed between the first conductivity-type semiconductor layer and thesecond conductivity-type semiconductor layer.
 19. The light emittingapparatus of claim 18, wherein the partition is directly connected tothe first conductivity-type semiconductor layer.
 20. The light emittingapparatus of claim 17, wherein each of the plurality of light adjustinglayers comprises: a wavelength conversion layer configured to convert awavelength of the light emitted from a corresponding light emittingregion among the light emitting regions; and a filter layer disposedabove the wavelength conversion layer.